| PART |
Description |
Maker |
| QM100 QM100TX1-HB |
HIGH POWER SWITCHING USE INSULATED TYPE
240 x 128 pixel format, STN Blue
CAP, CHIP, 1812, 16V, X7R, 10UF
大功率开关使用绝缘型
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MMFT2406T1 MMFT2406T MMFT2406T1_D ON2217 |
MEDIUM POWER TMOS FET 700 mA 240 VOLTS 0.7 A, 240 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| QM50TX-HB |
240 x 128 pixel format, LED or EL Backlight
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MP6901 |
4 A, 80 V, 6 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching
High Power Switching Applications / Hammer Drive
|
TOSHIBA[Toshiba Semiconductor]
|
| APT8024B2VR APT8024LVR |
POWER MOS V 800V 33A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT5024BVR |
POWER MOS V 500V 22A 0.240 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8024JLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 800V 29A 0.240 Ohm
|
Advanced Power Technology
|
| 2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS
From old datasheet system
FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
|
Toshiba Corporation
Toshiba Semiconductor
|
| LTC4267CGNTR LTC4267IGNTR LTC4267IGNTRPBF LTC4267I |
Power over Ethernet IEEE 802.3af PD Interface with Integrated Switching Regulator; Package: DFN; No of Pins: 16; Temperature Range: -40°C to 85°C
Power over Ethernet IEEE 802.3af PD Interface with Integrated Switching Regulator; Package: SSOP; No of Pins: 16; Temperature Range: -40°C to 85°C 1 A SWITCHING CONTROLLER, 240 kHz SWITCHING FREQ-MAX, PDSO16
Power over Ethernet IEEE 802.3af PD Interface with Integrated Switching Regulator; Package: SSOP; No of Pins: 16; Temperature Range: 0°C to 70°C 1 A SWITCHING CONTROLLER, 240 kHz SWITCHING FREQ-MAX, PDSO16
|
LINEAR TECHNOLOGY CORP
Linear Technology, Corp.
Linear Integrated Syste...
|
| FS50UMJ-3 |
Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| 2SA1759 A5800340 2SC4620 2SC4505 2SA1759T100P |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
High-Voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A)
High-Coltage Switching Transistor
|
ROHM
|
